对比图
型号 IXTN22N100L IXTX22N100L IXTK22N100L
描述 N-Channel Power MOSFET, IXYS Linear seriesN-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.### MOSFET 晶体管，IXYSIXYS 的一系列高级离散电源 MOSFET 设备N-Channel Power MOSFET, IXYS Linear seriesN-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.### MOSFET 晶体管，IXYSIXYS 的一系列高级离散电源 MOSFET 设备N-Channel Power MOSFET, IXYS Linear seriesN-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.### MOSFET 晶体管，IXYSIXYS 的一系列高级离散电源 MOSFET 设备
数据手册 ---
制造商 IXYS Semiconductor IXYS Semiconductor IXYS Semiconductor
分类 MOS管MOS管MOS管
引脚数 4 3 3
封装 SOT-227-4 TO-247-3 TO-264-3
安装方式 - Through Hole Through Hole
极性 N-CH N-CH N-CH
耗散功率 700 W 700 W 700 W
漏源极电压(Vds) 1000 V 1000 V 1000 V
连续漏极电流(Ids) 22A 22A 22A
上升时间 35 ns 35 ns 35 ns
输入电容(Ciss) 7050pF @25V(Vds) 7050pF @25V(Vds) 7050pF @25V(Vds)
下降时间 50 ns 50 ns 50 ns
工作温度(Max) 150 ℃ 150 ℃ 150 ℃
工作温度(Min) -55 ℃ -55 ℃ -55 ℃
耗散功率(Max) 700000 mW 700W (Tc) 700W (Tc)
通道数 - - 1
漏源极电阻 - - 600 mΩ
阈值电压 - - 5 V
漏源击穿电压 - - 1000 V
额定功率(Max) - 700 W 700 W
长度 38.2 mm 16.13 mm 19.96 mm
宽度 25.07 mm 5.21 mm 5.13 mm
高度 9.6 mm 21.34 mm 26.16 mm
封装 SOT-227-4 TO-247-3 TO-264-3
工作温度 -55℃ ~ 150℃ (TJ) -55℃ ~ 150℃ (TJ) -55℃ ~ 150℃ (TJ)
产品生命周期 Active Active Active
包装方式 Tube Tube Tube
RoHS标准 RoHS Compliant RoHS Compliant RoHS Compliant
含铅标准 Lead Free Lead Free Lead Free