对比图
型号 SPB80N10L SPP80N10L SPB80N10LG
描述 SIPMOS功率三极管 SIPMOS Power-TransistorSIPMOS功率三极管 SIPMOS Power-TransistorPower Field-Effect Transistor, 80A I(D), 100V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN
数据手册 ---
制造商 Infineon (英飞凌) Infineon (英飞凌) Infineon (英飞凌)
分类 MOS管MOS管MOS管
安装方式 Surface Mount Through Hole Through Hole
封装 TO-263-3-2 TO-220-3-1 TO-263
额定电压(DC) 100 V 100 V 100 V
额定电流 80.0 A 80.0 A 80.0 A
极性 N-CH N-CH -
耗散功率 250W (Tc) 250W (Tc) -
输入电容 4.54 nF 4.54 nF 4.54 nF
栅电荷 240 nC 240 nC 240 nC
漏源极电压(Vds) 100 V 100 V 100 V
连续漏极电流(Ids) 80.0 A 80.0 A 80.0 A
输入电容(Ciss) 4540pF @25V(Vds) 4540pF @25V(Vds) 4540pF @25V(Vds)
耗散功率(Max) 250W (Tc) 250W (Tc) -
额定功率(Max) - - 250 W
封装 TO-263-3-2 TO-220-3-1 TO-263
工作温度 -55℃ ~ 175℃ (TJ) -55℃ ~ 175℃ (TJ) -
产品生命周期 Obsolete Obsolete Obsolete
包装方式 Tape Tube Cut Tape (CT)
RoHS标准 Non-Compliant RoHS Compliant RoHS Compliant
含铅标准 Contains Lead Lead Free Lead Free