对比图
型号 SI4501ADY SI4501DY SI4501DY-T1
描述 Si4501ADY vs. Si4501DYComplementary MOSFET Half-Bridge (N- and P-Channel)Small Signal Field-Effect Transistor, 9A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
数据手册 ---
制造商 Vishay Siliconix Vishay Siliconix Vishay Siliconix
分类 MOS管MOS管MOS管
安装方式 Surface Mount Surface Mount Surface Mount
封装 SOIC SO SO
引脚数 8 - -
漏源极电阻 42.0 mΩ 18.0 mΩ 18.0 mΩ
极性 Dual N-Channel, Dual P-Channel N-Channel, P-Channel N-Channel, P-Channel
耗散功率 2.50 W 2.50 W 2.50 W
漏源击穿电压 - 30.0 V 30.0 V
连续漏极电流(Ids) 6.30 A -9.00 A to 9.00 A -9.00 A to 9.00 A
封装 SOIC SO SO
产品生命周期 Unknown Unknown Obsolete
包装方式 - - Tape & Reel (TR)
RoHS标准 Non-Compliant Non-Compliant Non-Compliant