M36DR432B100ZA6C和M36DR432B100ZA6T

对比图

型号 M36DR432B100ZA6C M36DR432B100ZA6T M36DR232A120ZA6T

描述 32兆位的2Mb X16 ，双行，页闪存和4兆位256K x16的SRAM ，多重内存产品 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product32兆位的2Mb X16 ，双行，页闪存和4兆位256K x16的SRAM ，多重内存产品 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory ProductMemory Circuit, 2MX16, CMOS, PBGA66, 0.80 MM PITCH, STACK, LFBGA-66

数据手册 ---

制造商 ST Microelectronics (意法半导体) ST Microelectronics (意法半导体) Numonyx

分类

封装 LFBGA LFBGA LFBGA

封装 LFBGA LFBGA LFBGA

产品生命周期 Unknown Unknown Obsolete

RoHS标准 Non-Compliant Non-Compliant -