对比图
型号 FLM1213-12F FLM1213-4C FLM1213-8F
描述 RF Power Field-Effect Transistor, 1Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2PinRF Power Field-Effect Transistor, 1Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2High Power GaAs FETs, Ku-Band, 6.5dB, 12.7 13.2GHz, 2200mA
数据手册 ---
制造商 Sumitomo (住友) Fujitsu (富士通) Sumitomo (住友)
分类
封装 CASE IB - CASE IA
频率 12.7GHz ~ 13.2GHz - 12.7GHz ~ 13.2GHz
封装 CASE IB - CASE IA
产品生命周期 Active Active Unknown
RoHS标准 RoHS Compliant - RoHS Compliant
含铅标准 Lead Free - -
香港进出口证 - - NLR