对比图
描述 Trans GP BJT NPN 200V 0.1A 3Pin Case MPNPN SILICON TRANSISTOR(GENERAL PURPOSE APPLICATIONS HIGH TOTAL POWER DISIPATION) PT = 600mWW General Purpose NPN Plastic Leaded Transistor. 45V Vceo, A Ic, - hFE
数据手册 ---
制造商 ON Semiconductor (安森美) Samsung (三星) Continental Device
分类
安装方式 Through Hole - -
引脚数 3 - -
封装 TO-92 TO-92 -
工作温度(Max) 150 ℃ - -
耗散功率(Max) 1000 mW - -
封装 TO-92 TO-92 -
材质 Silicon - -
产品生命周期 Unknown Obsolete Unknown
RoHS标准 RoHS Compliant - RoHS Compliant