对比图
描述 N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. DFN1006-3: leadless ultra small plastic package; 3 solder landsTrans MOSFET N-CH 20V 1A 3Pin DFN T/R
数据手册 --
制造商 NXP (恩智浦) NXP (恩智浦)
分类 MOS管MOS管
安装方式 Surface Mount Surface Mount
封装 DFN1006-3 SOT-883
耗散功率 350mW (Ta), 5.43W (Tc) -
漏源极电压(Vds) 20 V -
输入电容(Ciss) 46pF @10V(Vds) -
耗散功率(Max) 350mW (Ta), 5.43W (Tc) -
封装 DFN1006-3 SOT-883
工作温度 -55℃ ~ 150℃ (TJ) -
产品生命周期 Pre-Release Active
包装方式 Tape & Reel (TR) Tape & Reel (TR)
RoHS标准 RoHS Compliant RoHS Compliant
含铅标准 Lead Free Lead Free