FLM1213-6F和FLM1213-8F

对比图 P4CE10F17C6N中文资料P4CE10F17C6N中文资料P4CE10F17C6N中文资料

型号 FLM1213-6F FLM1213-8F FLM1213-12F

描述 High Power GaAs FETs, Ku-Band, 7dB, 12.7 13.2GHz, 1650mAHigh Power GaAs FETs, Ku-Band, 6.5dB, 12.7 13.2GHz, 2200mARF Power Field-Effect Transistor, 1Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2Pin

数据手册 ---

制造商 Sumitomo (住友) Sumitomo (住友) Sumitomo (住友)

分类

基础参数对比

封装 CASE IA CASE IA CASE IB

频率 12.7GHz ~ 13.2GHz 12.7GHz ~ 13.2GHz 12.7GHz ~ 13.2GHz

封装 CASE IA CASE IA CASE IB

产品生命周期 Unknown Unknown Active

RoHS标准 RoHS Compliant RoHS Compliant RoHS Compliant

含铅标准 - - Lead Free

香港进出口证 NLR NLR -

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