IDT70T653MS12BCGI和IDT70T653MS15BC

对比图 P4CE10F17C6N中文资料P4CE10F17C6N中文资料P4CE10F17C6N中文资料

型号 IDT70T653MS12BCGI IDT70T653MS15BC IDT70T653MS10BC

描述 IC SRAM 18Mbit 12NS 256BGAHIGH -SPEED 2.5V 512K ×36异步双口静态RAM为3.3V 0R 2.5V接口 HIGH-SPEED 2.5V 512K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACEHIGH -SPEED 2.5V 512K ×36异步双口静态RAM为3.3V 0R 2.5V接口 HIGH-SPEED 2.5V 512K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE

数据手册 ---

制造商 Integrated Device Technology (艾迪悌) Integrated Device Technology (艾迪悌) Integrated Device Technology (艾迪悌)

分类 存储芯片存储芯片存储芯片

基础参数对比

安装方式 Surface Mount Surface Mount Surface Mount

封装 BGA-256 BGA-256 BGA-256

电源电压 - 2.4V ~ 2.6V -

封装 BGA-256 BGA-256 BGA-256

工作温度 - 0℃ ~ 70℃ -

产品生命周期 Unknown Unknown Unknown

包装方式 Tray Tray Tray

RoHS标准 RoHS Compliant Non-Compliant Non-Compliant

含铅标准 Lead Free Contains Lead Contains Lead

ECCN代码 3A991 3A991 3A991

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