SPP80N04S2-04和SPP80N04S2-H4

对比图 P4CE10F17C6N中文资料P4CE10F17C6N中文资料P4CE10F17C6N中文资料

型号 SPP80N04S2-04 SPP80N04S2-H4 SPI80N04S2-04

描述 的OptiMOS功率三极管 OptiMOS Power-Transistor的OptiMOS功率三极管 OptiMOS Power-Transistor的OptiMOS功率三极管 OptiMOS Power-Transistor

数据手册 ---

制造商 Infineon (英飞凌) Infineon (英飞凌) Infineon (英飞凌)

分类 MOS管MOS管MOS管

基础参数对比

安装方式 Through Hole Through Hole Through Hole

封装 TO-220-3-1 TO-220-3-1 TO-262-3-1

额定电压(DC) 40.0 V 40.0 V 40.0 V

额定电流 80.0 A 80.0 A 80.0 A

极性 N-CH N-CH N-CH

耗散功率 300W (Tc) 300W (Tc) 300W (Tc)

输入电容 6.98 nF 5.89 nF 6.98 nF

栅电荷 170 nC 148 nC 170 nC

漏源极电压(Vds) 40 V 40 V 40 V

连续漏极电流(Ids) 80.0 A 80.0 A 80.0 A

输入电容(Ciss) 6980pF @25V(Vds) 5890pF @25V(Vds) 6980pF @25V(Vds)

耗散功率(Max) 300W (Tc) 300W (Tc) 300W (Tc)

封装 TO-220-3-1 TO-220-3-1 TO-262-3-1

工作温度 -55℃ ~ 175℃ (TJ) -55℃ ~ 175℃ (TJ) -55℃ ~ 175℃ (TJ)

产品生命周期 Obsolete Obsolete Obsolete

包装方式 Tube Tube Tube

RoHS标准 Non-Compliant Non-Compliant Non-Compliant

含铅标准 Contains Lead Contains Lead Contains Lead

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