对比图
型号 IRFY9130 IRFY9130CM IRFY9130C
描述 HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.TO-257AA P-CH 100V 11.2A11.2A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB, TO-220MC, 3 PIN
数据手册 ---
制造商 Infineon (英飞凌) Infineon (英飞凌) Semelab
分类
引脚数 3 3 -
封装 TO-257 TO-257 TO-257
输入电容(Ciss) 800pF @25V(Vds) 800pF @25V(Vds) -
工作温度(Max) 150 ℃ 150 ℃ -
工作温度(Min) -55 ℃ -55 ℃ -
耗散功率(Max) 75000 mW 75000 mW -
极性 - P-CH -
漏源极电压(Vds) - 100 V -
连续漏极电流(Ids) - 11.2A -
封装 TO-257 TO-257 TO-257
产品生命周期 Active Active Not Recommended
RoHS标准 Non-Compliant Non-Compliant RoHS Compliant