对比图
型号 FLM7785-6F FLM7785-8F FLM7785-4F
描述 RF Power Field-Effect Transistor, 1Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2PinRF Power Field-Effect Transistor, 1Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2PinRF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN
数据手册 ---
制造商 Sumitomo (住友) Sumitomo (住友) Fujitsu (富士通)
分类
封装 CASE IB CASE IB CASE IB
封装 CASE IB CASE IB CASE IB
产品生命周期 Active Active Unknown
频率 7.7GHz ~ 8.5GHz 7.7GHz ~ 8.5GHz -
RoHS标准 RoHS Compliant RoHS Compliant -
含铅标准 Lead Free Lead Free -
香港进出口证 NLR NLR -