对比图
型号 BSM100GAL120DN2 CM100E3U-24H BSM100GAL120DLCK
描述 IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes)POWEREX CM100E3U-24H IGBT Array & Module Transistor, N Channel, 100A, 1.2kV, 650W, 1.2kV, ModuleIGBT模块 IGBT-modules
数据手册 ---
制造商 Siemens Semiconductor (西门子) Powerex Infineon (英飞凌)
分类 IGBT晶体管IGBT晶体管
安装方式 - Chassis -
引脚数 - 5 7
封装 - Module 34MM
极性 - N-Channel -
耗散功率 - 650 W -
击穿电压(集电极-发射极) - 1200 V -
输入电容(Cies) - 15nF @10V -
额定功率(Max) - 650 W -
工作温度(Max) - 150 ℃ -
封装 - Module 34MM
宽度 - - 34 mm
产品生命周期 Obsolete Not Recommended Not Recommended
RoHS标准 - RoHS Compliant RoHS Compliant
含铅标准 - Lead Free Lead Free