IDT7132LA55P和IDT7132SA55CB

对比图 P4CE10F17C6N中文资料P4CE10F17C6N中文资料P4CE10F17C6N中文资料

型号 IDT7132LA55P IDT7132SA55CB IDT7132LA55CB

描述 HIGH -SPEED 2K ×8双端口静态对中断RAM HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTSHIGH -SPEED 2K ×8双端口静态对中断RAM HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTSHIGH -SPEED 2K ×8双端口静态对中断RAM HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS

数据手册 ---

制造商 Integrated Device Technology (艾迪悌) Integrated Device Technology (艾迪悌) Integrated Device Technology (艾迪悌)

分类 存储芯片存储芯片存储芯片

基础参数对比

安装方式 Through Hole - Through Hole

封装 DIP DIP DIP

封装 DIP DIP DIP

产品生命周期 Unknown Unknown Unknown

包装方式 Tube - Tube

RoHS标准 Non-Compliant - RoHS Compliant

含铅标准 Contains Lead - Lead Free

ECCN代码 EAR99 3A001 3A001

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