对比图
型号 IXTA76N075T IXTP76N075T FDB7080
描述 D2PAK N-CH 75V 76ATO-220 N-CH 75V 76APower Field-Effect Transistor, 75A I(D), 80V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,
数据手册 ---
制造商 IXYS Semiconductor IXYS Semiconductor Fairchild (飞兆/仙童)
分类 MOS管MOS管
安装方式 Surface Mount Through Hole -
封装 TO-263-3 TO-220-3 -
极性 N-CH N-Channel -
耗散功率 176W (Tc) 176W (Tc) -
漏源极电压(Vds) 75 V 75 V -
连续漏极电流(Ids) 76A 76.0 A -
输入电容(Ciss) 2580pF @25V(Vds) 2580pF @25V(Vds) -
耗散功率(Max) 176W (Tc) 176W (Tc) -
漏源极电阻 - 12.0 mΩ -
漏源击穿电压 - 75.0 V -
封装 TO-263-3 TO-220-3 -
工作温度 -55℃ ~ 175℃ (TJ) -55℃ ~ 175℃ (TJ) -
产品生命周期 Obsolete Obsolete Obsolete
包装方式 Tube Tube -
RoHS标准 RoHS Compliant RoHS Compliant -
含铅标准 Lead Free Lead Free -