对比图
型号 FQB2N90 IRFBF20S IRFBF20SPBF
描述 900V N沟道MOSFET 900V N-Channel MOSFETMOSFET N-CH 900V 1.7A D2PAKPower Field-Effect Transistor, 1.7A I(D), 900V, 8Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3
数据手册 ---
制造商 Fairchild (飞兆/仙童) Vishay Siliconix Vishay Intertechnology
分类 MOS管
封装 D2PAK TO-263-3 -
安装方式 - Surface Mount -
极性 N-CH - -
漏源极电压(Vds) 900 V 900 V -
连续漏极电流(Ids) 2.2A - -
耗散功率 - 3.1W (Ta), 54W (Tc) -
输入电容(Ciss) - 490pF @25V(Vds) -
耗散功率(Max) - 3.1W (Ta), 54W (Tc) -
封装 D2PAK TO-263-3 -
产品生命周期 Unknown Obsolete Active
工作温度 - -55℃ ~ 150℃ (TJ) -
RoHS标准 - Non-Compliant RoHS Compliant
含铅标准 - Contains Lead Lead Free