对比图
型号 PHP112N06T PHP112N06T,127 934056648118
描述 N沟道增强模式音响场效晶体管 N-channel enhancement mode field-effect transistorTO-220AB N-CH 55V 75ATRANSISTOR 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power
数据手册 ---
制造商 NXP (恩智浦) NXP (恩智浦) NXP (恩智浦)
分类 晶体管MOS管
安装方式 Through Hole Through Hole -
封装 SOT-78 TO-220-3 -
极性 - N-CH -
耗散功率 - 200W (Tc) -
漏源极电压(Vds) 55.0 V 55 V -
连续漏极电流(Ids) 75.0 A 75A -
输入电容(Ciss) - 4352pF @25V(Vds) -
额定功率(Max) - 200 W -
耗散功率(Max) - 200W (Tc) -
额定电压(DC) 55.0 V - -
额定电流 75.0 A - -
输入电容 4.35 nF - -
栅电荷 87.0 nC - -
封装 SOT-78 TO-220-3 -
工作温度 - -55℃ ~ 175℃ (TJ) -
产品生命周期 Unknown Obsolete Obsolete
包装方式 Tube Tube -
RoHS标准 RoHS Compliant RoHS Compliant RoHS Compliant
含铅标准 Lead Free Lead Free -