IRF320和JANTXV2N6760

对比图 P4CE10F17C6N中文资料P4CE10F17C6N中文资料P4CE10F17C6N中文资料

型号 IRF320 JANTXV2N6760 IRF330

描述 Trans MOSFET N-CH 400V 3.3A 3Pin(2+Tab) TO-3The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high trans conductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.N-沟道 400 V 1 Ω 75 W 通孔 HexFet 晶体管 - TO-3

数据手册 ---

制造商 Infineon (英飞凌) Infineon (英飞凌) Infineon (英飞凌)

分类 MOS管MOS管

基础参数对比

引脚数 - 3 3

封装 - TO-204 TO-204

安装方式 - - Through Hole

输入电容(Ciss) - 620pF @25V(Vds) 620pF @25V(Vds)

工作温度(Max) - 150 ℃ 150 ℃

工作温度(Min) - -55 ℃ -55 ℃

耗散功率(Max) - 75000 mW 75000 mW

额定功率 - - 75 W

上升时间 - - 40 ns

下降时间 - - 35 ns

封装 - TO-204 TO-204

产品生命周期 Active Active Active

RoHS标准 Non-Compliant Non-Compliant Non-Compliant

工作温度 - - -55℃ ~ 150℃

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