对比图
型号 IRFF430 JANTX2N6802 JAN2N6802
描述 Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN每N沟道MOSFET合格MIL -PRF-五百五十七分之一万九千五百 N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557每N沟道MOSFET合格MIL -PRF-五百五十七分之一万九千五百 N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557
数据手册 ---
制造商 Microsemi (美高森美) Microsemi (美高森美)
分类 MOS管MOS管
安装方式 - Through Hole Through Hole
引脚数 - 3 3
封装 - TO-205 TO-205
耗散功率 - 0.8 W 0.8 W
漏源极电压(Vds) - 600 V 500 V
耗散功率(Max) - 800mW (Ta), 25W (Tc) 800mW (Ta), 25W (Tc)
工作温度(Max) - - 150 ℃
工作温度(Min) - - -55 ℃
封装 - TO-205 TO-205
工作温度 - -55℃ ~ 150℃ (TJ) -55℃ ~ 150℃ (TJ)
产品生命周期 Active Obsolete Obsolete
包装方式 - - Bulk
RoHS标准 - Non-Compliant Non-Compliant
含铅标准 - Contains Lead Contains Lead