FDC6303N

FAIRCHILD SEMICONDUCTOR  FDC6303N  双路场效应管, MOSFET, 双N沟道, 680 mA, 25 V, 450 mohm, 4.5 V, 800 mV

The is a dual N-channel logic level enhancement-mode FET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-channel FET can replace several digital transistors with different bias resistors like the IMHxA series.

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Very low level gate drive requirements allowing direct operation in 3V circuits

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Gate-source Zener for ESD ruggedness

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Replace multiple NPN digital transistors IMHxA series with one DMOS FET

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8V Gate-source voltage

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0.68A Continuous drain/output current

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2A Pulsed drain/output current