



PNP硅平面高电流晶体管特点5安培连续电流高达15安培的峰值电流极低的饱和电压出色的增益特性可达10安培互补类型FZT853
集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| -140V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| −100V 集电极连续输出电流ICCollector CurrentIC| -5A 截止频率fTTranstion FrequencyfT| 125MHz 直流电流增益hFEDC Current GainhFE| 100~300 管压降VCE(sat)Collector-Emitter SaturationVoltage| -420mV/-0.42V 耗散功率PcPoWer Dissipation| 3W Description & Applications| PNP SILICON PLANAR HIGH CURRENT TRANSISTORS FEATURES 5 Amps continuous current , up to 15 Amps peak current Very low saturation voltages Excellent gain characteristics specified up to 10 Amps COMPLEMENTARY TYPES FZT853 描述与应用| PNP硅平面高电流晶体管 特点 5安培连续电流高达15安培的峰值电流 极低的饱和电压 出色的增益特性可达10安培 互补类型FZT853

