IPAN50R500CEXKSA1概述
N-CH 500V 11.1A
Summary of Features:
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Reduced energy stored in output capacitance E oss
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High body diode ruggedness
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Reduced reverse recovery charge Q rr
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Reduced gate charge Q g
Benefits:
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Easy control of switching behavior
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Better light load efficiency compared to previous CoolMOS™ generations
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Cost attractive alternative compared to standard MOSFETs
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Outstanding quality and reliability of CoolMOS™ technology
Target Applications:
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Consumer
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Lighting
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PC silverbox
IPAN50R500CEXKSA1中文资料参数规格 技术参数
极性 N-CH
耗散功率 28 W
漏源极电压Vds 500 V
连续漏极电流Ids 11.1A
上升时间 5 ns
输入电容Ciss 433pF @100VVds
下降时间 12 ns
工作温度Max 150 ℃
工作温度Min -40 ℃
耗散功率Max 28000 mW
封装参数
安装方式 Through Hole
引脚数 3
封装 TO-220-3
符合标准
RoHS标准 RoHS Compliant
含铅标准 无铅
在线购买IPAN50R500CEXKSA1 型号: IPAN50R500CEXKSA1
描述:N-CH 500V 11.1A