LET9060C

LET9060C 系列 945 MHz 130 W 80 V N沟道 射频 功率 晶体管 MOSFET - M-243

This specially engineered RF amplifier from STMicroelectronics is perfect for circuits that operate at high frequencies. Its maximum power dissipation is 130000 mW. Its maximum frequency is 1000 MHz. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 200 °C. This N channel RF power MOSFET operates in enhancement mode.

得捷:
MOSFET N-CH 80V 12A M-243

贸泽:
射频金属氧化物半导体场效应RF MOSFET晶体管 RF Power LdmoST 60W 18 dB 945MHz

艾睿:
Trans RF MOSFET N-CH 80V 12A 3-Pin Case M-243

安富利:
Trans MOSFET N-CH 80V 12A 2-Pin M243 Loose Piece

富昌:
LET9060C 系列 945 MHz 130 W 80 V N沟道 射频 功率 晶体管 MOSFET - M-243

Chip1Stop:
Trans RF MOSFET N-CH 80V 12A 3-Pin Case M-243

Newark:
# STMICROELECTRONICS  LET9060C  RF FET Transistor, 80 V, 12 A, 130 W, 945 MHz

DeviceMart:
MOSFET N-CH 80V 12A M-243