L125

L125概述

N-CH 70V 2A

15.0 Watts Single Ended Package Style SO8-1

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE

General Description

Silicon VDMOS and LDMOS

transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

"Polyfet"™ process features low feedback and output capacitances resulting in high Ft transistors with high input impedance and high efficiency.


L125中文资料参数规格
技术参数

极性 N-CH

漏源极电压Vds 70 V

连续漏极电流Ids 2A

其他

产品生命周期 Unknown

符合标准

RoHS标准 RoHS Compliant

数据手册

在线购买L125
型号: L125
制造商: POLYFET
描述:N-CH 70V 2A

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