MJE182

MJE182图片1
MJE182图片2
MJE182概述

MJE182G 盒装

MJE170, MJE171, MJE172 PNP, MJE180, MJE181, NPN

3 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 40 − 60 − 80 VOLTS 12.5 WATTS

The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications.

Features

•Collector−Emitter Sustaining Voltage −

VCEOsus = 40 Vdc − MJE170, MJE180

               = 60 Vdc − MJE171, MJE181

              = 80 Vdc − MJE172, MJE182

•DC Current Gain −

hFE = 30 Min @ IC= 0.5 Adc

       = 12 Min @ IC= 1.5 Adc

•Current−Gain − Bandwidth Product − fT = 50 MHz Min @ IC= 100 mAdc

•Annular Construction for Low Leakages − ICBO = 100 nA Max @ Rated VCB

•Epoxy Meets UL 94 V−0 @ 0.125 in

•ESD Ratings: Machine Model, C Human Body Model, 3B

•Pb−Free Packages are Available
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MJE182中文资料参数规格
技术参数

额定电压DC 100 V

额定电流 3.00 A

极性 NPN

耗散功率 12.5 W

击穿电压集电极-发射极 40 V

集电极最大允许电流 3A

最小电流放大倍数hFE 50

最大电流放大倍数hFE 250

工作温度Max 150 ℃

工作温度Min -65 ℃

耗散功率Max 12500 mW

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-225

外形尺寸

封装 TO-225

物理参数

材质 Silicon

其他

产品生命周期 Not Recommended for New Designs

包装方式 Box

最小包装 500

符合标准

RoHS标准 Non-Compliant

含铅标准 Lead Free

REACH SVHC标准 No SVHC

海关信息

ECCN代码 EAR99

数据手册

在线购买MJE182
型号: MJE182
制造商: ON Semiconductor 安森美
描述:MJE182G 盒装
替代型号MJE182
型号/品牌 代替类型 替代型号对比

MJE182

ON Semiconductor 安森美

当前型号

当前型号

MJE182G

安森美

功能相似

MJE182和MJE182G的区别

MJE182STU

安森美

功能相似

MJE182和MJE182STU的区别

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