MUN5113DW1T1G

ON SEMICONDUCTOR  MUN5113DW1T1G  单晶体管 双极, 双PNP, 50 V, 250 mW, 100 mA, 80 hFE

- 双极 BJT - 阵列 - 预偏置

得捷:
TRANS 2PNP PREBIAS 0.25W SOT363

立创商城:
双 PNP 双极数字晶体管 BRT

e络盟:
晶体管 双极预偏置/数字, 双路 PNP, 50 V, -100 mA, 47 kohm, 47 kohm

艾睿:
Are you in need of the digital form of a traditional bipolar junction transistor? The PNP MUN5113DW1T1G digital transistor from ON Semiconductor is what you&s;ve been looking for. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 385 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a dual configuration.

安富利:
Trans Digital BJT PNP 50V 100mA 6-Pin SC-88 T/R

Chip1Stop:
Trans Digital BJT PNP 50V 100mA 385mW Automotive 6-Pin SC-88 T/R

TME:
Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 187mW; SOT363; R1:47kΩ

Verical:
Trans Digital BJT PNP 50V 100mA Automotive 6-Pin SC-88 T/R

Newark:
# ON SEMICONDUCTOR  MUN5113DW1T1G  Bipolar BJT Single Transistor, Dual PNP, 50 V, 250 mW, 100 mA, 80

Win Source:
TRANS 2PNP PREBIAS 0.25W SOT363