互补达林顿功率晶体管 Complementary Darlington Power Transistors
SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS, 20 WATTS
MJD112 NPN
MJD117 PNP
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves No Suffix
• Straight Lead Version in Plastic Sleeves “−1” Suffix
• Electrically Similar to Popular TIP31 and TIP32 Series
• Pb−Free Packages are Available
额定电压DC 100 V
额定电流 2.00 A
极性 NPN
耗散功率 20 W
击穿电压集电极-发射极 100 V
集电极最大允许电流 2A
最小电流放大倍数hFE 1000 @2A, 3V
额定功率Max 1.75 W
工作温度Max 150 ℃
工作温度Min -65 ℃
增益带宽 25MHz Min
耗散功率Max 1750 mW
安装方式 Through Hole
引脚数 3
封装 TO-251-3
长度 6.73 mm
宽度 6.22 mm
高度 6.35 mm
封装 TO-251-3
工作温度 -65℃ ~ 150℃ TJ
产品生命周期 Unknown
包装方式 Tube
RoHS标准 Non-Compliant
含铅标准 Contains Lead
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
MJD112-001 ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MJD112-1 安森美 | 完全替代 | MJD112-001和MJD112-1的区别 |
MJD112-1G 安森美 | 类似代替 | MJD112-001和MJD112-1G的区别 |
MJD112-001G 安森美 | 类似代替 | MJD112-001和MJD112-001G的区别 |