MJD128T4G

互补达林顿功率晶体管 Complementary Darlington Power Transistor

- 双极 BJT - 单 PNP - 达林顿 4MHz 表面贴装型 DPAK

得捷:
TRANS PNP DARL 120V 8A DPAK

立创商城:
MJD128T4G

艾睿:
Do you have a circuit where a higher current gain is required? ON Semiconductor&s;s PNP MJD128T4G Darlington transistor can help! This product&s;s maximum continuous DC collector current is 8 A, while its minimum DC current gain is 1000@4A@4 V|100@8A@4V. It has a maximum collector emitter saturation voltage of 2@16mA@4A|4@80mA@8A V. This Darlington transistor array&s;s maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 4.5@80mA@8A V. Its maximum power dissipation is 1750 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 120 V and a maximum emitter base voltage of 5 V.

安富利:
Trans Darlington PNP 120V 8A 3-Pin2+Tab DPAK T/R

富昌:
MJD 系列 120 V 8 A PNP 互补 达林顿 功率晶体管 - TO-252

Chip1Stop:
Trans Darlington PNP 120V 8A 3-Pin2+Tab DPAK T/R

Verical:
Trans Darlington PNP 120V 8A 1750mW 3-Pin2+Tab DPAK T/R