MJ15012G

MJ15012G图片1
MJ15012G图片2
MJ15012G概述

互补硅功率晶体管 Complementary Silicon Power Transistors

MJ15011NPN,

MJ15012PNP

10 AMPERE COMPLEMENTARY POWER TRANSISTORS 250 VOLTS 200 WATTS

The MJ15011 and MJ15012 are PowerBase power transistors designed for high−power audio, disk head positioners, and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc−to−dc converters or inverters.

• High Safe Operating Area 100% Tested 1.2 A @ 100 V

• Completely Characterized for Linear Operation

• High DC Current Gain and Low Saturation Voltage hFE = 20 Min @ 2 A, 2 V

VCEsat = 2.5 V Max @ IC = 4 A, IB = 0.4 A

• For Low Distortion Complementary Designs

• Pb−Free Packages are Available
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MJ15012G中文资料参数规格
技术参数

极性 PNP

击穿电压集电极-发射极 250 V

集电极最大允许电流 10A

工作温度Max 200 ℃

工作温度Min -65 ℃

耗散功率Max 200000 mW

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-3

外形尺寸

封装 TO-3

物理参数

材质 Silicon

其他

产品生命周期 Unknown

包装方式 Tray

符合标准

RoHS标准

含铅标准 Lead Free

数据手册

在线购买MJ15012G
型号: MJ15012G
制造商: ON Semiconductor 安森美
描述:互补硅功率晶体管 Complementary Silicon Power Transistors
替代型号MJ15012G
型号/品牌 代替类型 替代型号对比

MJ15012G

ON Semiconductor 安森美

当前型号

当前型号

MJ15012

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功能相似

MJ15012G和MJ15012的区别

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