高电流互补硅功率晶体管 High−Current Complementary Silicon Power Transistors
50 AMPERE COMPLEMENTARY DARLINGTON POWER TRANSISTORS 60 − 120 VOLTS 300 WATTS
High−Current Complementary Silicon Power Transistors are for use
as output devices in complementary general purpose amplifier
applications.
Features
•High DC Current Gain − hFE= 1000 Min @ IC= 25 Adc
hFE= 400 Min @ IC= 50 Adc
•Curves to 100 A Pulsed
•Diode Protection to Rated IC
•Monolithic Construction with Built−In Base−Emitter Shunt Resistor
•Junction Temperature to +200C
•Pb−Free Packages are Available额定电压DC 90.0 V
额定电流 50.0 A
耗散功率 300000 mW
击穿电压集电极-发射极 90 V
最小电流放大倍数hFE 1000 @25A, 5V
额定功率Max 300 W
工作温度Max 200 ℃
工作温度Min -55 ℃
耗散功率Max 300000 mW
安装方式 Through Hole
引脚数 3
封装 TO-3
封装 TO-3
工作温度 -55℃ ~ 200℃ TJ
产品生命周期 Unknown
包装方式 Tray
RoHS标准 Non-Compliant
含铅标准 Contains Lead
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
MJ11030 ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MJ11032G 安森美 | 功能相似 | MJ11030和MJ11032G的区别 |
MJ11028G 安森美 | 功能相似 | MJ11030和MJ11028G的区别 |
NTE2349 NTE Electronics | 功能相似 | MJ11030和NTE2349的区别 |