MUN5113DW1T1

MUN5113DW1T1图片1
MUN5113DW1T1图片2
MUN5113DW1T1图片3
MUN5113DW1T1概述

双偏置电阻晶体管 Dual Bias Resistor Transistors

Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single

device. In the MUN5111DW1T1 series,two BRT devices are housed in the SOT−363 package which is ideal for low−power surface mount applications where board space is at a premium.

Features

•Simplifies Circuit Design

•Reduces Board Space

•Reduces Component Count

•Pb−Free Packages are Available

MUN5113DW1T1中文资料参数规格
技术参数

极性 PNP

耗散功率 250 mW

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 80

最大电流放大倍数hFE 80 @5mA, 10V

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 385 mW

封装参数

安装方式 Surface Mount

引脚数 6

封装 SC-88-6

外形尺寸

长度 2 mm

宽度 1.25 mm

高度 0.9 mm

封装 SC-88-6

其他

产品生命周期 Unknown

包装方式 Tape & Reel TR

符合标准

RoHS标准 Non-Compliant

含铅标准 Lead Free

数据手册

在线购买MUN5113DW1T1
型号: MUN5113DW1T1
制造商: ON Semiconductor 安森美
描述:双偏置电阻晶体管 Dual Bias Resistor Transistors
替代型号MUN5113DW1T1
型号/品牌 代替类型 替代型号对比

MUN5113DW1T1

ON Semiconductor 安森美

当前型号

当前型号

MUN5113DW1T1G

安森美

功能相似

MUN5113DW1T1和MUN5113DW1T1G的区别

锐单商城 - 一站式电子元器件采购平台