MRFE6VP8600HSR5

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MRFE6VP8600HSR5概述

RF Power Transistor,470 to 860MHz, 600W, Typ Gain in dB is 19.3 @ 860MHz, 50V, LDMOS, SOT1829

Overview

MRFE6VP8600HR6 and MRFE6VP8600HSR6 are optimized for broadband operation from 470 to 860 MHz. Devices have an integrated input matching network for better power distribution. These devices are ideally suited for use in analog or digital television transmitters.

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## Features

* Capable of Handling >65:1 VSWR through all Phase Angles @ 50 Vdc, 860 MHz, DVB-T 8k OFDM 240 Watts Avg. Output Power 3 dB Input Overdrive from Rated Pout

* Exceptional Efficiency for Class AB Analog or Digital Television Operation

* Full Performance across Complete UHF TV Spectrum, 470-860 MHz

* Capable of 600 Watt CW Output Power with Adequate Thermal Management

* Integrated Input Matching

* Extended Negative Gate-Source Voltage Range of -6.0 V to +10 V

* Improves Class C Performance, e.g. in a Doherty Peaking Stage

* Enables Fast, Easy and Complete Shutdown of the Amplifier

* Characterized from 20 V to 50 V for Extended Operating Range for use with Drain Modulation

* Excellent Thermal Characteristics

* RoHS Compliant

* In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.

* These products are included in Our product longevity program with assured supply for a minimum of 15 years after launch.

**NOTE: PARTS ARE PUSH–PULL**

## Features

**NOTE: PARTS ARE PUSH–PULL**RF Performance Tables

### Narrowband Performance

Typical Narrowband Performance: VDD = 50 Volts, IDQ = 1400 mA, Channel Bandwidth = 8 MHz, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 7.61 MHz Signal Bandwidth @ ±4 MHz Offset with an Integration Bandwidth of 4 kHz.
.
*Signal Type** | **Pout
W
.
* | **f
MHz
.
* | **Gps
dB
.
* | **ηD
%
.
* | **ACPR
dBc
.
* | **IRL
dB
.
*

\---|---|---|---|---|---|---

DVB-T 8k OFDM | 125 Avg.| 860| 19.3| 30.0| –65.5| –12

### Pulse Broadband Performance

Typical Pulse Broadband Performance: VDD = 50 Volts, IDQ = 1400 mA, Pulse Width = 100 µsec, Duty Cycle = 10%
.
*Signal Type** | **Pout
W
.
* | **f
MHz
.
* | **Gps
dB
.
* | **ηD
%
.
*

\---|---|---|---|---

Pulse | 600 Peak| 470| 19.3| 47.1

650| 20.0| 53.1

860| 18.8| 48.9

MRFE6VP8600HSR5中文资料参数规格
技术参数

频率 860 MHz

无卤素状态 Halogen Free

耗散功率 1052000 mW

输出功率 125 W

增益 19.3 dB

测试电流 1.4 A

输入电容Ciss 264pF @50VVds

工作温度Max 225 ℃

工作温度Min -65 ℃

耗散功率Max 1052000 mW

额定电压 130 V

电源电压 50 V

封装参数

安装方式 Surface Mount

引脚数 5

封装 NI-1230S

外形尺寸

封装 NI-1230S

物理参数

重量 13263.9 mg

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买MRFE6VP8600HSR5
型号: MRFE6VP8600HSR5
制造商: NXP 恩智浦
描述:RF Power Transistor,470 to 860MHz, 600W, Typ Gain in dB is 19.3 @ 860MHz, 50V, LDMOS, SOT1829
替代型号MRFE6VP8600HSR5
型号/品牌 代替类型 替代型号对比

MRFE6VP8600HSR5

NXP 恩智浦

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当前型号

MRFE6VP8600HSR6

恩智浦

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MRFE6VP8600HSR5和MRFE6VP8600HSR6的区别

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