MIC94052YC6

MIC94052YC6TR P沟道MOS场效应管 -6V 2A 0.07ohm SOT-363 marking/标记 P52 低导通电阻

最大源漏极电压VdsDrain-Source Voltage| -6V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| -6V 最大漏极电流IdDrain Current| -2A 源漏极导通电阻RdsDrain-Source On-State Resistance| 0.07 @-100mA,-4.5V 开启电压Vgs（th）Gate-Source Threshold Voltage| -0.5--1.2V 耗散功率PdPower Dissipation| 270mW/0.27W Description & Applications| Features • 0.125Ω typical on-resistance at 4.5V gate-to-source voltage • Operates with 1.8V gate-to-source voltage • Separate substrate connection allows reverse-blocking 描述与应用| •0.125Ω的导通电阻的典型 在4.5V栅极至源极电压 •使用1.8V的栅 - 源电压 •独立的基板连接允许反向阻断