PBSS4032SPN

NXP  PBSS4032SPN  双极晶体管阵列, NPN, PNP, 30 V, 2.3 W, 5.7 A, 300 hFE, SOIC

The is a NPN-PNP breakthrough-in small signal BISS Bipolar Transistor Array in a medium power surface-mount plastic package. It is suitable for DC-to-DC conversion, battery-driven devices and charging circuits. It utilizes required smaller printed-circuit board PCB area than for conventional transistors.

.

Low collector-emitter saturation voltage VCEsat

.

Optimized switching time

.

High collector current capability IC and ICM

.

High collector current gain hFE at high IC

.

High efficiency due to less heat generation

.

PBSS4032SN dual NPN complement

.

PBSS4032SP dual PNP complement