RF功率晶体管, LDMOST塑料系列N沟道增强模式横向的MOSFET RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
This RF amplifier from STMicroelectronics is a semiconductor-based transistor that amplifies or switches electronic signals and electrical power in a circuit. Its maximum power dissipation is 79000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 1000 MHz. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C.
频率 870 MHz
耗散功率 79 W
输出功率 10 W
增益 17.3 dB
测试电流 300 mA
输入电容Ciss 55pF @12.5VVds
工作温度Max 165 ℃
工作温度Min -65 ℃
耗散功率Max 79000 mW
额定电压 40 V
引脚数 3
封装 PowerSO-10RF
长度 9.4 mm
宽度 7.5 mm
高度 3.5 mm
封装 PowerSO-10RF
工作温度 -65℃ ~ 165℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
PD85025S-E ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
PD85025STR-E 意法半导体 | 完全替代 | PD85025S-E和PD85025STR-E的区别 |
PD85025TR-E 意法半导体 | 类似代替 | PD85025S-E和PD85025TR-E的区别 |