


LDMOST 系列 N沟道 增强模式 射频 功率晶体管 PowerSO-10RF
Amplifying and switching electronic signals in radio frequency environments is easy with this RF amplifier from STMicroelectronics. Its maximum power dissipation is 20000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C. Its maximum frequency is 945 MHz. This N channel RF power MOSFET operates in enhancement mode.
频率 945 MHz
额定电流 1 A
耗散功率 20 W
漏源击穿电压 65 V
输出功率 6 W
增益 15 dB
测试电流 70 mA
输入电容Ciss 27pF @28VVds
工作温度Max 165 ℃
工作温度Min -65 ℃
耗散功率Max 20000 mW
额定电压 65 V
安装方式 Surface Mount
引脚数 3
封装 PowerSO-10RF
长度 7.5 mm
宽度 9.4 mm
高度 3.5 mm
封装 PowerSO-10RF
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
PD57006S-E ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
PD57006STR-E 意法半导体 | 类似代替 | PD57006S-E和PD57006STR-E的区别 |
PD57006TR-E 意法半导体 | 类似代替 | PD57006S-E和PD57006TR-E的区别 |