NXP PSMN1R7-30YL 晶体管, MOSFET, N沟道, 100 A, 30 V, 1.29 mohm, 10 V, 1.7 V
The is a N-channel logic level MOSFET with advanced TrenchMOS technology provides low RDS ON and low gate charge. It is designed and qualified for use in a wide range of It is designed and qualified for use in a wide range of DC-to-DC converters, lithium-ion battery protection, load switching, server power supplies and domestic equipment applications.
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- Improved mechanical and thermal characteristics
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- High efficiency gains in switching power converters
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- LFPAK provides maximum power density in a power SO8 package
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- -55 to 175°C Junction temperature range
针脚数 4
漏源极电阻 1.29 mΩ
极性 N-Channel
耗散功率 109 W
阈值电压 1.7 V
漏源极电压Vds 30 V
连续漏极电流Ids 100 A
输入电容Ciss 5057pF @12VVds
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 109 W
安装方式 Surface Mount
引脚数 4
封装 SOT-669
长度 5 mm
宽度 4.1 mm
高度 1.1 mm
封装 SOT-669
产品生命周期 Unknown
包装方式 Cut Tape CT
制造应用 Consumer Electronics, Power Management, Motor Drive & Control, Communications & Networking, Industrial
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17