PBSS5140T

低VCEsat晶体管（ BISS ）晶体管 Low VCEsat BISS transistors

集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| -40V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| −40V 集电极连续输出电流ICCollector CurrentIC| -1A 截止频率fTTranstion FrequencyfT| 150MHz 直流电流增益hFEDC Current GainhFE| 300~800 管压降VCE（sat）Collector-Emitter SaturationVoltage| −500mV/-0.5V 耗散功率PcPoWer Dissipation| 300mW/0.3W Description & Applications| General description PNP low VCEsat Breakthrough In Small Signal BISS transistor in a SOT23 TO-236ABsmall Surface-Mounted Device SMD plastic package. Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC High efficiency due to less heat generation Applications General-purpose switching and muting LCD backlighting Supply line switching circuits Battery-driven equipment mobile phones, video cameras and handheld devices 描述与应用| 一般说明 PNP低VCE（饱和）突破性小信号（BISS），采用SOT23（TO-236AB）小型表面贴装器件（SMD）塑料包装。 特点 低集电极 - 发射极饱和电压VCE监测 高集电极电流能力IC和ICM 高集电极电流IC在高增益（HFE） 由于产生的热量少，效率高 应用 通用开关和静音 LCD背光 供电线路开关电路 电池驱动的设备（手机，摄像机和手持设备）