PMXB75UPE

PMXB75UPE图片1
PMXB75UPE图片2
PMXB75UPE图片3
PMXB75UPE概述

DFN-D P-CH 20V 2.9A

The is a P-channel enhancement-mode FET in a leadless ultra-small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in high-side load switch and charging switch for portable devices, power management in battery driven portables, LED driver and DC-to-DC converter applications.

.
Leadless ultra small and ultra thin SMD plastic package
.
Exposed drain pad for excellent thermal conduction
.
1.5kV ESD protection HBM
.
69mR Drain-source ON-state resistance RDS ON
.
Very low gate-source threshold voltage of -0.68Vfor portable applications VGS th
.
-55 to 150°C Junction temperature range
PMXB75UPE中文资料参数规格
技术参数

漏源极电阻 0.069 Ω

极性 P-Channel

耗散功率 317 mW

漏源极电压Vds 20 V

连续漏极电流Ids 2.9A

工作温度Max 150 ℃

封装参数

引脚数 3

封装 DFN

外形尺寸

封装 DFN

其他

产品生命周期 Unknown

制造应用 Power Management, Industrial, LED Lighting, Portable Devices

符合标准

RoHS标准 RoHS Compliant

REACH SVHC标准 No SVHC

REACH SVHC版本 2015/12/17

数据手册

在线购买PMXB75UPE
型号: PMXB75UPE
制造商: NXP 恩智浦
描述:DFN-D P-CH 20V 2.9A

 锐单商城 - 一站式电子元器件采购平台  

 深圳锐单电子有限公司