FAIRCHILD SEMICONDUCTOR RFD3055LESM9A 晶体管, MOSFET, N沟道, 11 A, 60 V, 0.107 ohm, 5 V, 3 V
The is a N-channel enhancement-mode Power MOSFETs manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching converters and relay drivers. It can be operated directly from integrated circuits.
- .
- Temperature compensating PSPICE® model
- .
- Peak current vs. pulse width curve
- .
- UIS Rating curve
额定电压DC 60.0 V
额定电流 11.0 A
通道数 1
针脚数 3
漏源极电阻 0.107 Ω
极性 N-Channel
耗散功率 38 W
阈值电压 3 V
输入电容 350 pF
栅电荷 9.40 nC
漏源极电压Vds 60 V
漏源击穿电压 60.0 V
栅源击穿电压 ±16.0 V
连续漏极电流Ids 11.0 A, 11.0 mA
上升时间 105 ns
输入电容Ciss 350pF @25VVds
额定功率Max 38 W
下降时间 39 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 38W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.73 mm
宽度 6.22 mm
高度 2.39 mm
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
RFD3055LESM9A Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
RFD3055LESM 飞兆/仙童 | 类似代替 | RFD3055LESM9A和RFD3055LESM的区别 |
BUK92150-55A,118 恩智浦 | 功能相似 | RFD3055LESM9A和BUK92150-55A,118的区别 |