FAIRCHILD SEMICONDUCTOR RFD14N05SM9A 晶体管, MOSFET, N沟道, 14 A, 50 V, 100 mohm, 10 V, 4 V
The is a N-channel Power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching converters and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09770.
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- Temperature compensating PSPICE® model
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- Peak current vs. pulse width curve
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- UIS Rating curve
额定电压DC 50.0 V
额定电流 14.0 A
通道数 1
针脚数 3
漏源极电阻 100 mΩ
极性 N-Channel
耗散功率 48 W
阈值电压 4 V
漏源极电压Vds 50 V
漏源击穿电压 50.0 V
连续漏极电流Ids 14.0 mA
上升时间 26 ns
输入电容Ciss 570pF @25VVds
额定功率Max 48 W
下降时间 17 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 48 W
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.73 mm
宽度 6.22 mm
高度 2.39 mm
封装 TO-252-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
RFD14N05SM9A Fairchild 飞兆/仙童 | 当前型号 | 当前型号 |
RFD14N05SM 飞兆/仙童 | 类似代替 | RFD14N05SM9A和RFD14N05SM的区别 |
MTD3055E 摩托罗拉 | 功能相似 | RFD14N05SM9A和MTD3055E的区别 |
MTD10N05E 摩托罗拉 | 功能相似 | RFD14N05SM9A和MTD10N05E的区别 |