SD2932 系列 250 MHz 300W 125V N-沟道 高频/甚高频/特高频 射频 功率晶体管 - M-244
Amplifying and switching electronic signals in radio frequency environments is easy with this RF amplifier from STMicroelectronics. Its maximum power dissipation is 500000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. Its maximum frequency is 250 MHz. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 150 °C. This N channel RF power MOSFET operates in enhancement mode.
频率 175 MHz
额定电流 40 A
耗散功率 500 W
漏源击穿电压 125 V
输出功率 300 W
增益 16 dB
测试电流 500 mA
输入电容Ciss 480pF @50VVds
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 500000 mW
额定电压 125 V
安装方式 Surface Mount
引脚数 5
封装 M-244
封装 M-244
工作温度 -65℃ ~ 200℃
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
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SD2932W ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
SD2932 意法半导体 | 功能相似 | SD2932W和SD2932的区别 |