STGB10NC60K 系列 N 沟道 600 V 10 A 短路 PowerMesh IGBT - D2PAK
The IGBT transistor from STMicroelectronics is the best electronic switch for fast switching. Its maximum power dissipation is 65000 mW. It has a maximum collector emitter voltage of 600 V. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
额定电压DC 600 V
额定电流 10.0 A
极性 N-Channel
耗散功率 65000 mW
栅电荷 19.0 nC
漏源极电压Vds 600 V
连续漏极电流Ids 10.0 A
上升时间 6.00 ns
击穿电压集电极-发射极 600 V
额定功率Max 65 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 65000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
长度 10.4 mm
宽度 9.35 mm
高度 4.6 mm
封装 TO-263-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STGB10NC60KT4 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
IRG4BC30S-SPBF 国际整流器 | 功能相似 | STGB10NC60KT4和IRG4BC30S-SPBF的区别 |