STGW25H120DF2

1200V,25A高速沟槽栅场终止IGBT

The IGBT transistor from STMicroelectronics is the best electronic switch for fast switching. Its maximum power dissipation is 375000 mW. It has a maximum collector emitter voltage of 1200 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with field stop|trench technology. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.