Trans IGBT Chip N-CH 600V 18A 62500mW Automotive 3Pin2+Tab DPAK T/R
Use the IGBT transistor from STMicroelectronics as an electronic switch. Its maximum power dissipation is 62500 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
型号/品牌 | 代替类型 | 替代型号对比 |
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STGD10HF60KD ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STGD25N40LZAG 意法半导体 | 类似代替 | STGD10HF60KD和STGD25N40LZAG的区别 |