STGP10NC60S

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STGP10NC60S概述

IGBT 晶体管 10A-600V fast IGBT

You won"t need to worry about any lagging in your circuit with this IGBT transistor from STMicroelectronics. Its maximum power dissipation is 62500 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

STGP10NC60S中文资料参数规格
技术参数

耗散功率 62500 mW

击穿电压集电极-发射极 600 V

额定功率Max 62.5 W

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 62500 mW

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

封装 TO-220-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Not Recommended for New Designs

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买STGP10NC60S
型号: STGP10NC60S
描述:IGBT 晶体管 10A-600V fast IGBT

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