SPD06N60C3BTMA1

单 P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3

表面贴装型 N 通道 6.2A（Tc） 74W（Tc） PG-TO252-3

得捷:
MOSFET N-CH 650V 6.2A TO252-3

艾睿:
As an alternative to traditional transistors, the SPD06N60C3BTMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 74000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device utilizes coolmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.

富昌:
SPD06N60C3 系列 650 V 0.75 Ohm N沟道 Cool MOS™ 功率 晶体管 - PG-TO252-3

Verical:
Trans MOSFET N-CH 650V 6.2A 3-Pin2+Tab DPAK T/R

Win Source:
MOSFET N-CH 650V 6.2A TO-252