N沟道100 V, 0.015 I© , 60 A , STripFETâ ?? ¢ DeepGATEâ ?? ¢功率MOSFET采用TO- 220 , DPAK , TO- 247 , D2PAK N-channel 100 V, 0.015 Ω, 60 A, STripFET⢠DeepGATE⢠Power MOSFET in TO-220, DPAK, TO-247, D2PAK
通孔 N 通道 65A(Tc) 150W(Tc) TO-220-3
得捷:
MOSFET N-CH 100V 65A TO220-3
贸泽:
MOSFET N-Ch, 100V-0.015ohms 60A
艾睿:
Use STMicroelectronics&s; STP70N10F4 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 150000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
安富利:
* Exceptional dv/dt capability * Extremely low on-resistance RDSon * 100% avalanche tested
富昌:
STP70N10F4 Series N-Channel 100 V 0.0195 Ohm STripFET™ Power MOSFET - TO-220
Chip1Stop:
Trans MOSFET N-CH 100V 65A 3-Pin3+Tab TO-220 Tube
Win Source:
MOSFET N-CH 100V 65A TO-220
通道数 1
漏源极电阻 15 mΩ
极性 N-Channel
耗散功率 150 W
漏源极电压Vds 100 V
漏源击穿电压 100 V
上升时间 20 ns
输入电容Ciss 5800pF @25VVds
额定功率Max 150 W
下降时间 20 ns
工作温度Max 175 ℃
工作温度Min 55 ℃
耗散功率Max 150W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.4 mm
宽度 4.6 mm
高度 9.15 mm
封装 TO-220-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STP70N10F4 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
RSJ550N10TL 罗姆半导体 | 功能相似 | STP70N10F4和RSJ550N10TL的区别 |
STW70N10F4 意法半导体 | 功能相似 | STP70N10F4和STW70N10F4的区别 |
SUP60N10-18P-E3 Vishay Siliconix | 功能相似 | STP70N10F4和SUP60N10-18P-E3的区别 |