N沟道40V - 3兆欧姆 - 120 A TO - 220 / D2PAK / I2PAK的STripFET II MOSFET N-CHANNEL 40V - 3 m ohm - 120 A TO-220/D2PAK/I2PAK STripFET II MOSFET
DESCRIPTION
This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignement steps therefore a remarkable manufacturing reproducibility. This new improved device has been specifically designed for Automotive applications.
General Features
■ TYPICAL RDSon = 3mΩ
■ 100% AVALANCHE TESTED
■ LOW THERESHOLD DRIVE
APPLICATIONS
■ HIGH CURRENT, HIGH SWITCHING SPEED
额定电压DC 40.0 V
额定电流 120 A
漏源极电阻 3.00 mΩ
极性 N-Channel
耗散功率 300 W
输入电容 6.40 nF
栅电荷 72.0 nC
漏源极电压Vds 40 V
漏源击穿电压 40.0 V
栅源击穿电压 ±16.0 V
连续漏极电流Ids 120 A
上升时间 270 ns
输入电容Ciss 6400pF @25VVds
额定功率Max 300 W
下降时间 80 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 300W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.4 mm
宽度 4.6 mm
高度 9.15 mm
封装 TO-220-3
工作温度 -55℃ ~ 175℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STP200NF04L ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
STB200NF04-1 意法半导体 | 功能相似 | STP200NF04L和STB200NF04-1的区别 |