








PNP中功率晶体管 PNP MEDIUM POWER TRANSISTOR
- 双极 BJT - 单 PNP 80 V 1.5 A 50MHz 1.6 W 表面贴装型 SOT-223
得捷:
TRANS PNP 80V 1.5A SOT223
艾睿:
STMicroelectronics has the solution to your circuit&s;s high-voltage requirements with their PNP STN817A general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1600 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
Chip1Stop:
Trans GP BJT PNP 80V 1.5A 4-Pin3+Tab SOT-223 T/R
Win Source:
TRANS PNP 80V 1.5A SOT-223
极性 PNP
耗散功率 1.6 W
击穿电压集电极-发射极 80 V
集电极最大允许电流 1.5A
最小电流放大倍数hFE 30 @1A, 2V
额定功率Max 1.6 W
直流电流增益hFE 140
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 1600 mW
安装方式 Surface Mount
引脚数 3
封装 TO-261-4
封装 TO-261-4
工作温度 -65℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17


